Microsemi 2n2150 2n2151 free download

File name 2n2150_2n2151.pdf

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/277 Devices Qualified Level 2N2150 2N2151 JANTX MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value Units Collector-Emitter Voltage VCEO 100 Vdc Collector-Base Voltage VCBO 150 Vdc Emitter-Base Voltage VEBO 8.0 Vdc Base Current IB 2.0 Adc Collector Current IC 2.0 Adc Total Power Dissipation @ Tc = +1000C(1) PT 30 W Operating & Storage Junction Temperature Range 0 TJ, Tstg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit TO-111* 0 Thermal Resistance, Junction-to-Case RJC 3.3 C/W 1) Derate linearly @ 0.3 W/0C for TC > +1000C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = +250C) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 100 Vdc IC = 50 mAdc Collector-Emitter Breakdown Voltage VCBO 150 Vdc IC = 100